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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

Categories Mosfet Power Transistor
Brand Name: IOR
Model Number: IRF3205PBF
Certification: ROHS
Place of Origin: CHINA
MOQ: 10pcs
Price: negotiate
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
Delivery Time: 2-3 working days
Packaging Details: 98PCS/Standard Package
FET Type: N-Channel
Drain to Source Voltage: 55V
Power Dissipation: 200W
Operating Temperature: -55°C ~ 175°C
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    N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF

    IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB

    Description

    Advanced HEXFET® Power MOSFETs from International

    Rectifier utilize advanced processing techniques to achieve

    extremely low on-resistance per silicon area. This benefit,

    combined with the fast switching speed and ruggedized

    device design that HEXFET power MOSFETs are well known

    for, provides the designer with an extremely efficient and

    reliable device for use in a wide variety of applications.

    The TO-220 package is universally preferred for all

    commercial-industrial applications at power dissipation levels

    to approximately 50 watts. The low thermal resistance and

    low package cost of the TO-220 contribute to its wide

    acceptance throughout the industry.

    FET TypeN-Channel
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)55V
    Current - Continuous Drain (Id) @ 25°C110A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Rds On (Max) @ Id, Vgs8 mOhm @ 62A, 10V
    Vgs(th) (Max) @ Id4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs146nC @ 10V
    Vgs (Max)±20V
    Input Capacitance (Ciss) (Max) @ Vds3247pF @ 25V
    FET Feature-
    Power Dissipation (Max)200W (Tc)
    Operating Temperature-55°C ~ 175°C

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