280mA Powerful Low Noise RF Amplifier 700 - 2700MHz Frequency YP2233W
|
TXtelsig YP2233W RF Amplifier 700-2700MHz Power Amplifier The YP2233W is a high dynamic range broadband power amplifier in a surface mount package. The two-stage amplifier provides a typical gain of 26dB, while being able to achieve high performance for ......
Shenzhen TeXin electronic Co., Limited
|
HMC536LP2E RF Power Transistors High Performance Low Noise High Gain
|
...RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs. Features: • Gain: 14.5 dB • Power Output: +28 dBm • P1dB: +26 dBm • Noise......
Shenzhen Sai Collie Technology Co., Ltd.
|
RF Power Transistors FHC40LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE
|
FHC40LG is a Super Low Noise HEMT. Part NO: FHC40LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ......
Mega Source Elec.Limited
|
MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel
|
...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
|
BFQ67W SOT-23 Electronics Integrated Circuits Complementary Silicon NPN Planar RF Transistor
|
...)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies....
ChongMing Group (HK) Int'l Co., Ltd
|
BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor
|
... low noise figure, high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 GHz Collector-Emitter Voltage (Vce):...
Shenzhen Chive Electronics Co., Ltd.
|
BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
|
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current
|
2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High ......
Anterwell Technology Ltd.
|
BFP420H6327XTSA1
|
Typical Applications Low-Noise Amplifiers (LNAs): Ideal for RF front-end applications in communication systems. Oscillators: Suitable for oscillators up to 10 GHz. Mixers: Used in frequency mixing applications due to its high gain and low noise ......
Shikun Electronics Co., Ltd
|
FT93C46A-IDR-B IC EEPROM 1KBIT 3-WIRE 2MHZ 8DIP Fremont Micro Devices Ltd
|
..., spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and...
Sanhuang electronics (Hong Kong) Co., Limited
|