N And P Channel 30V MOSFET JY12M 3-Phase H Bridge Circuit BLDC Mosfet Driver
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General Descriptions: The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These ......
Changzhou Junqi International Trade Co.,Ltd
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3 Phase 30A H Bridge Circuit Bldc Mosfet Driver
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JY12M N and P Channel 30V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially ......
Changzhou Bextreme Shell Motor Technology Co.,Ltd
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High Current Rating 600V Power MOSFET For Controls And Bridge Circuits
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600V High Current Rating High Power MOSFET For Controls And Bridge Circuits Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • HIGH EFFICIENCY SWITCH • Motor driven • Ammeter • UPS power......
Guangdong Lingxun Microelectronics Co., Ltd
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STW48NM60N Transistors Integrated Circuit Ic MOSFET N-CH 600V 44A 3 Pin TO-247 Tube
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STW48NM60N Transistors MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube General Description : This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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High Current Mosfet Driver For BLDC Motor Driver , 30A H Bridge Circuit Mosfet
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JY12M N and P Channel 30V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially ......
Shanghai Juyi Electronic Technology Development Co., Ltd
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STA434A PNP + NPN Darlington H - bridge general purpose mosfet Philippines
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...bridge Absolute maximum ratings Symbol Specification Unit NPN PNP VCBO 80 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 4 –4 A ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%) A PT 4 (Ta=25°C) W 20 (Tc=25°C) Tj 150 °C Tstg –40 to +150 °C ■Equivalent circuit......
Anterwell Technology Ltd.
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American Microchip Integrated Circuits AD4111BCPZ-RL7 Brand New Original Electronic Components Package DFN-6-EP(1.6x1.6) Monitor and Reset Chip MOSFET
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New and Original Integrated Circuits IC Chips Electronic Components [Who are we?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including analog, digital, and RF integrated circuits, ......
ShenZhen QingFengYuan Technology Co.,Ltd.
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Half Bridge FF8MR12W2M1B11BOMA1 CoolSiC MOSFET Module 1200V Automotive IGBT Modules
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Half Bridge FF8MR12W2M1B11BOMA1 CoolSiC MOSFET Module 1200V Automotive IGBT Modules Product Description Of FF8MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1 is 1200 V, 8 mΩ half-bridge module with CoolSiC™ MOSFET, NTC temperature sensor and PressFIT contact ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Through Hole Electronic Integrated Circuits STW45NM60 MOSFET NCh 650 Volt 45 Amp
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Through Hole Electronic Integrated Circuits STW45NM60 MOSFET NCh 650 Volt 45 Amp Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- ......
Shenzhen Hongxinwei Technology Co., Ltd
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Short Circuit Power Mosfet Transistors Autoprotected VND3NV0413TR
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...Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
ChongMing Group (HK) Int'l Co., Ltd
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