AP12N10D Power Switch Transistor , Original Silicon Power Transistor
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...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MJ21194 COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA RF Power Transistors
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MJ21194 is a COMPLEMENTARY SILICON POWER TRANSISTORS . Part NO: MJ21194 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products......
Mega Source Elec.Limited
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors
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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (......
ChongMing Group (HK) Int'l Co., Ltd
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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
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...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power......
Shenzhen ATFU Electronics Technology ltd
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1 N-Channel MSC060SMA070B4 700V Silicon Carbide Transistors TO-247-4 Power MOSFET
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...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds -...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23
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Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING......
Guangdong Huixin Electronics Technology Co., Ltd.
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IGT60R070D1ATMA1 Gan Power Transistors , Industrial High Speed Transistor
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... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
Shenzhen Weitaixu Capacitor Co.,Ltd
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XT60H-M 12AWG Silicone Power Cable Assembly for High-Current Applications
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..., low resistance, and heat resistance are required. The assembly uses a 2-pin XT60H-M type male connector terminated with 12 AWG silicone insulated wires, providing reliable electrical performance in compact power systems. According to the...
Shenzhen Sino-Media Technology Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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