RF Power Transistors BLC6G20LS-75 UHF power LDMOS transistor RF Power Transistors
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BLC6G20LS-75 IS A UHF power LDMOS transistor. Part NO: BLC6G20LS-75 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor
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...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power......
Yingxinyuan Int'l(Group) Ltd.
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BLF188XR Electronic Component SOT539A BLF188X R Power LDMOS transistor BLF188 XR BLF 188XR BL F188XR B LF188XR
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor
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...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4
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MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......
Shenzhen Koben Electronics Co., Ltd.
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500-2500 MHz Psat 25 W UHF Power Amplifier High Power Microwave Amplifier For satellite communications
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...UHF Power Amplifier High Power Microwave Amplifier For satellite communications Description The 500-2500 MHz Psat 25 W UHF Power Amplifier is a specialized device designed to amplify radio frequency (RF) signals within the ultra-high frequency (UHF) band, specifically in the frequency range of 500 MHz to 2500 MHz. Frequency Range: This power amplifier operates within the UHF......
Nanjing Shinewave Technology Co., Ltd.
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MJD112T4G high power mosfet transistors , Complementary Darlington Power Transistors
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... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •...
Anterwell Technology Ltd.
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BLF7G20L-90P UHF RF Amplifier Transistor LDMOS FET GSM
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BLF7G20L-90P N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF7G20L-90P #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border......
Shenzhen Kaigeng Technology Co., Ltd.
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
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