bipolar transistor power module

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

...Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

...) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power mode Standby Common mode voltage (V) -30 to 30 Isolated No Features for the TCAN1042G-Q1 AEC-Q100 (grade 1): Qualified for

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

...Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power...

Brand Name:MMR

Place of Origin:China

High Performance Black Insulated Gate Bipolar Transistor For General Purpose Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -...

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

Model Number:STRW6754

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Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

...IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode Circuit Module...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2DI30M-050

...BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: 2DI30M-050 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months 　 　 Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:Infineon Technologies

Model Number:IRG4PC40UDPBF

Place of Origin:original

...Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power applications, including motor control, welding, lighting and renewable energy systems. The module...

Brand Name:INFINEON

Model Number:FF300R17KE4

Place of Origin:Original

... Trench/Feld stopp IGBT 4und Emitter Controlled Diode 1 TechnischeInformation/TechnicalInformation FF300R17KE4 IGBT-Module IGBT-modules Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as

Brand Name:International Rectifier

Model Number:IRG4PH50UD

...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of 600V and

Brand Name:ZFeng

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Model Number:TIP41C

Place of Origin:China

Brand Name:original

...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power...

Brand Name:INFINEON/IR

Model Number:IRGB10B60KDPBF

Place of Origin:Germany

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode ...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

...-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector power dissipation (Tc = 25°C) PC 130 W

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

...Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 1 V Pd - Power

Brand Name:Original

Model Number:2N3792

Place of Origin:Original

...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors...

Brand Name:ONSEMI

Model Number:NJW0302G

Place of Origin:Japan

... NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high ...