n channel rf amplifier transistor

Model Number:XRF286S

Place of Origin:Malaysia

Brand Name:KAIGENG

XRF286S N/A Electronic Components IC MCU Microcontroller Integrated Circuits XRF286S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Place of Origin:CN

Brand Name:Original Factory

Model Number:ADL5205ACPZ

Integrated Circuit Chip ADL5205ACPZ 35 dB Range 2 Channel RF Amplifier IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MW6S004

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,

Brand Name:Analog Devices Inc.

Model Number:HMC789ST89ETR

Place of Origin:Multi-origin

...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor...

Brand Name:ON

Model Number:MMBF5484

Place of Origin:ON

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain Gate Voltage: ...

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor Polarity: N-Channel...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:P-AMF

Model Number:CD8000

Place of Origin:china

...Channel Power Amplifier for Audio System Integration CD8000 Operational Principles Amplification Process: The amplifier takes a low-level audio signal (like from a mixer) and uses transistors or tubes in the amplification stage to increase the signal's power. This process involves manipulating the input signal to produce a stronger output without altering the original sound characteristics. Feedback Mechanism: Many amplifiers

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:TX TELSIG

Model Number:YP2233W

Place of Origin:China

... with up to +35dBm of compressed 1dB power, typical bias condition is 5V at 280mA. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT)

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

...RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23-3 Packaging: Reel Brand: Vishay Semiconductors Channel...

Brand Name:ST

Model Number:PD57018-E

Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...

Brand Name:MXT

Model Number:TDD1450T1500M 2x10W-28V

Place of Origin:China

20W Amplifier COFDM Signal 1450MHz 1500MHz private network wireless data transmission LTE Mode 2 Channel Product Description: LTE Power Amplifier 1400MHz private network amplifier. This product is designed to amplify signals for private networks operating...

Place of Origin:GuangZhou,China

Brand Name:HOT DEVICES

Model Number:FP 10000Q (MST-4130)

... 10000Q (MST-4130) Switch Mode 4 Channel 4x1300W Amplifier Quick Detail: 1. Light weight, 4-channel switch mode amplifier, 4x1300W @ 8Ω. 2. Fixed with original NOVER(from UK) power capacitors and SK power transistors to achieve good sound quality. Actual ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...