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Total 1050 products from power switching mosfet enhancement mode Manufactures & Suppliers |
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Brand Name:JUYI Model Number:JY4N8M Place of Origin:China ...Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:Diodes Model Number:DMN26D0UFB4-7 Place of Origin:UAS DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ... |
Eastern Stor International Ltd.
Guangdong |
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Model Number:FTR Place of Origin:Guangdong, China Brand Name:Original #detail_decorate_root .magic-0{border-bottom-style:none;border-bottom-color:113c6f;font-family:Verdana;font-size:24px;color:#fff;background-color:#113c6f;text-align:center;text-decoration:underline;font-style:normal;font-weight:bold;border-bottom-width:2px... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:Lingxun Model Number:CS4N50A2 Place of Origin:China ...Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252/TO-251 MAIN CHARACTERISTICS ID:4A VDSS:500V RDSON-typ VGS=10V: 2.1Ω FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • LED power supplies • Cell Phone Charger • Standby Power... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:12N60 Place of Origin:ShenZhen China ...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:onsemi Model Number:FDMS86105 Place of Origin:original FDMS86105 MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6A (Ta... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:AOSMD Model Number:AO4449 Place of Origin:brand new ... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). TYPICAL ELECTRICAL AND |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:DIODES Model Number:ZXMP10A17E6TA Place of Origin:Original ...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:JUYI Model Number:JY8N5M Place of Origin:China ... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details |
Changzhou Bextreme Shell Motor Technology Co.,Ltd
Jiangsu |
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Brand Name:Original Factory Model Number:DMT47M2SFVWQ Place of Origin:CN ... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Place of Origin:China Brand Name:ONSEMI Model Number:NVMS5P02 High Power MOSFET NVMS5P02 Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Freescale Model Number:MRF6V2150NBR1 Place of Origin:USA MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:APEC Model Number:AP4953GM Place of Origin:Original Factory INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. AP4953GM Manufacturer APEC supply ability 3000 datecode 2007+ package SOP remark new... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:SRF6S19140HS SRF6S19140HS is a N-Ch Enhancement Mode Power MOSFET. Part NO: SRF6S19140HS Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ... |
Mega Source Elec.Limited
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Brand Name:FORTUNE Model Number:FS8205A Place of Origin:TAIWAN ...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:JUYI Model Number:JY16M Place of Origin:China General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ... |
Changzhou Junqi International Trade Co.,Ltd
Jiangsu |
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Brand Name:Texas Instruments Model Number:PD85035S-E Place of Origin:Malaysia ... power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at ... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Original Model Number:TLE7239SL Place of Origin:Original TLE7239SL Power Switch ICs Power Distribution SPI Driver Enhanced Relay Control SPI Driver Enhanced Relay Control Features ● 8 bit SPI for diagnostics and control, providing daisy chain capability ● Very wide range for digital supply ... |
Walton Electronics Co., Ltd.
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Brand Name:Hua Xuan Yang Model Number:G170C03LR1S Place of Origin:ShenZhen China ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Place of Origin:GuangZhou,China Brand Name:HOT DEVICES Model Number:S-1500 ... sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers are a good solution. Our S-700,900,1200,1500 are one series Class TD switch mode power amplifier with |
GuangZhou Master Sound Equipment Co., Limited
Guangdong |