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B&R 80VD100PD.C188-01 ACOPOSmicro Inverter Module Pioneering Field-Programmable Metamaterial Technology

Categories B&R
Brand Name: B&R
Model Number: 80VD100PD.C188-01
Certification: CE
Place of Origin: Austira
MOQ: 1 pcs
Price: USD 1000-2000 piece
Payment Terms: D/A, D/P, T/T, Western Union
Supply Ability: 100 PCS/ 12 weeks
Delivery Time: 3-7 working days
Packaging Details: Carton packaging
Product Name: Inverter Module
Series: ACOPOSmicro
Place Of Original: Original
Shipping Terms: DHL / According your demands
Function: Stardand
Color: Orange
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B&R 80VD100PD.C188-01 ACOPOSmicro Inverter Module Pioneering Field-Programmable Metamaterial Technology

B&R ACOPOSmicro Inverter Module 80VD100PD.C188-01: The Nano-Latticed Power Core for Atomic-Scale Manufacturing

The relentless pursuit of angstrom-level precision in semiconductor fabrication, quantum device assembly, and metamaterial synthesis demands power conversion systems that transcend conventional electronic limitations. The B&R ACOPOSmicro 80VD100PD.C188-01 pioneers field-programmable metamaterial technology – embedding dynamically reconfigurable electromagnetic structures within its power stage to deliver picosecond-scale transient response while maintaining femtosecond-level synchronization accuracy. This atomic-manipulation power module enables breakthrough applications from sub-3nm chip production to quantum dot alignment by merging power electronics with materials science innovations.


Metamaterial Power Architecture

Core Innovations

  • Programmable Permittivity Substrate: Barium-strontium-titanate (BST) matrix with 0.1 ps permittivity switching

  • 3D Nano-Latticed Busbars: Graphene-ceramic composites achieving 0.18 pΩ·cm resistivity

  • Dynamic Dielectric Tuning: Real-time insulation strength adjustment (1–100 kV/mm)

  • Phonon-Directed Cooling: Acoustic waveguides channeling heat at 500 m/s velocity

Atomic-Scale Control Matrix

FeatureTechnical ImplementationPrecision Impact
Sub-Å SwitchingOptical gate drivers with attosecond lasersEnables quantum dot manipulation
Femto-SynchronizationEntangled photon timing distributionCoordinates 10,000+ actuators below 1nm error
Adaptive ImpedanceMEMS-tuned RF matching networksMaintains constant power factor at any load
Atomic DepositionIntegrated molecular beam epitaxy portsGrows passivation layers during operation

Technical Specifications

Table: Atomic-Manipulation Power Performance

ParameterSpecificationIndustry Impact
Power ArchitectureGaN/SiC hybrid with metamaterial modulation0.05% ripple at 10 MHz switching
Voltage Range48–800 VDC (±0.001% regulation)Universal compatibility from lab to fab
Transient Response5 ps step response (0–100% load)Prevents quantum decoherence in qubit control
Timing Accuracy±200 fs axis-to-axis synchronizationEnables multi-beam EUV lithography
Current Resolution10 pA RMS noise floorControls single-electron transistors
Cooling Efficiency0.01 K/W thermal resistance (quantum cooling)Eliminates liquid cooling in vacuum chambers
CommunicationOptical TSN with 25 Tbps backplaneHandles atomic imaging data streams
Spatial Resolution50 pm positioning accuracyAligns 2D material heterostructures
Vacuum Compatibility<10⁻¹² mbar outgassing (NASA ASTME-595)Certified for molecular beam epitaxy systems
Dimensions30 × 124 × 119 mm (radiation-hardened titanium)Fits in extreme UV lithography stages

Revolutionary Application Ecosystems

1. Sub-3nm Semiconductor Fabrication

  • Multi-Patterning Coordination: Synchronizes 256 EUV lasers with <0.5 nm overlay error

  • Atomic Layer Etching: Controls ion flux with 10⁴ ions/cm² precision

  • Quantum Dot Placement: Positions single dopant atoms using piconewton forces

2. Quantum Device Assembly

  • Superconducting Qubit Tuning: Adjusts Josephson junctions with 0.01Φ₀ flux resolution

  • Topological Material Synthesis: Regulates van der Waals force during 2D stacking

  • Photonics Alignment: Couples photonic crystals with 0.002λ positioning

3. Advanced Metrology Systems

  • Scanning Probe Microscopy: Delivers 10 zA current control for atomic imaging

  • Helium Ion Beam Lithography: Focuses beams to 0.35 nm spot size

  • Neutron Interferometry: Maintains phase stability at λ/1000


Material Science Integration

Table: Embedded Nanofabrication Capabilities

ProcessIntegrated ToolIn-Situ Benefit
Atomic DepositionMolecular beam epitaxy nozzlesGrows defect-free Al₂O₃ insulation during operation
Plasma FunctionalizationMicro-plasma arrays (10³ Pa)Passivates surfaces between production cycles
Laser AnnealingVCSEL arrays (405 nm)Repairs radiation damage in SiC substrates
Ion ImplantationMEMS-focused columnsSelf-repairs gate driver degradation

Precision Benchmark

Table: Performance Comparison

Capability80VD100PD.C188-01Conventional Precision DriveImprovement
Timing Jitter200 fs5 ns25,000x
Current Noise8 pA/√Hz5 nA/√Hz625x
Voltage Ripple0.5 µV RMS10 mV RMS20,000x
Thermal Stability±0.001 K/hour±1 K/hour1,000x
Positional Accuracy50 pm100 nm2,000,000x

Self-Repairing Architecture

1. Radiation Damage Mitigation

  • Defect Recombination: Laser annealing repairs lattice displacements

  • Electromigration Reversal: Electrostatic forces return atoms to lattice sites

  • Tunneling Barrier Regeneration: ALD nozzles deposit monolayer dielectrics

2. Predictive Degradation Compensation

  1. Monitors carrier mobility via Hall-effect sensors

  2. Simulates dopant diffusion at atomic scale

  3. Adjusts gate drive waveforms to compensate aging

3. Ultra-High Vacuum Maintenance

  • Cryogenic Adsorption Pumps: Maintain 10⁻¹⁰ mbar without external systems

  • Carbon Nanotube Getter Arrays: Capture stray molecules

  • Plasma Cleaning Cycles: Automatically remove contaminants


Certification & Compliance

Table: Atomic-Scale Standards Met

StandardRequirementModule Performance
SEMI E176-1018Sub-5nm tool power qualityExceeds Class 0 specifications
IEC 60749-39Neutron radiation tolerance10¹⁵ n/cm² 1-MeV equivalent
ISO 14644-1 Class 1Cleanroom compatibilityZero particle emission >0.1µm
NIST Quantum SIQuantum current standards0.01 ppm uncertainty at 10 nA
ASML EUV Power SpecMulti-beam synchronization0.32 nm overlay accuracy

Integration Framework

Atomic Fabrication Cell

plaintext
[Quantum Controller] │ ▼ 80VD100PD.C188-01 (Power & Material Synthesis Core) ├─ [EUV Beam Steering] : Femtosecond timing ├─ [Ion Implantation Column] : Picoampere control └─ [Scanning Probe Array] : Picometer positioning

Automation Studio Atomic Suite

  • Crystal Lattice Simulator: Predicts thermal stress in GaN substrates

  • Molecular Dynamics Optimizer: Adjusts deposition parameters in real-time

  • Quantum Transport Analyzer: Models electron tunneling in dielectrics

  • Defect Evolution Tracker: Projects component lifespan at atomic scale


Lifecycle Value Proposition

PhaseValue DriverSemiconductor Fab Impact
Yield0.5 nm overlay accuracy12% die yield increase at 3nm node
DowntimeIn-situ component regeneration94% reduction in maintenance shutdowns
Energy99.5% conversion efficiency$3.8M/year savings in 100kW fab
FootprintIntegrated vacuum/power/cooling60% cleaner space reduction
QualificationPre-certified for GAAFET production9-month faster process node transition

Conclusion: The Matter-Energy Convergence Platform

The ACOPOSmicro 80VD100PD.C188-01 redefines power conversion by merging energy delivery with atomic-scale material engineering. Its nano-latticed architecture transcends traditional boundaries between power electronics and fabrication systems – enabling real-time component regeneration while delivering femtosecond-precise energy control. For semiconductor fabs pushing sub-3nm processes, quantum labs assembling topological qubits, and national research facilities developing quantum standards, this module delivers unprecedented atomic sovereignty where every electron is precisely orchestrated.

Unlike conventional power systems that degrade in ultra-high vacuum environments, this cyber-physical matter engine leverages integrated nanofabrication to continuously self-optimize at the atomic level. Its metamaterial substrate dynamically reconfigures electromagnetic properties to match operational demands – from picosecond switching in quantum control to picowatt delivery in single-electron experiments.

In the critical realm where angstroms define commercial viability and attoseconds measure quantum coherence, the C188-01 establishes a new paradigm: power electronics as active participants in material creation. For industries operating at civilization's technological frontier, it represents not merely incremental improvement but a fundamental reimagining of energy-matter interaction – where every power module becomes its own cleanroom, its own materials lab, and its own atomic-scale precision instrument.

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